IXDD514 / IXDE514
Electrical Characteristics @ temperatures over -55 o C to 125 o C (3)
Unless otherwise noted, 4.5V ≤ V CC ≤ 30V , Tj < 150 o C
All voltage measurements with respect to GND. IXD_502 configured as described in Test Conditions . All specifications are for one channel.
Symbol
Parameter
Test Conditions
Min
Typ (4)
Max
Units
V IH
V IL
High input voltage
Low input voltage
4.5V ≤ V CC ≤ 18V
4.5V ≤ V CC ≤ 18V
2.7
0.8
V
V
V IN
Input voltage range
-5
V CC + 0.3
V
I IN
Input current
0V ≤ V IN ≤ V CC
-10
10
μ A
V OH
V OL
High output voltage
Low output voltage
V CC - 0.025
0.025
V
V
R OH
Output resistance
V CC = 18V
1.25
?
@ Output high
R OL
Output resistance
V CC = 18V
1.25
?
@ Output Low
I DC
Continuous output
1
A
current
t R
t F
t ONDLY
Rise time
Fall time
On-time propagation
C L =15 nF Vcc=18V
C L =15 nF Vcc=18V
C L =15 nF Vcc=18V
23
30
20
100
100
60
ns
ns
ns
delay
t OFFDLY
Off-time propagation
C L =15 nF Vcc=18V
40
60
ns
delay
V CC
I CC
Power supply voltage
Power supply current
V IN = 3.5V
V IN = 0V
4.5
18
1
0
30
3
10
V
mA
μ A
V IN = + V CC
10
μ A
Notes:
1. Operating the device beyond the parameters listed as “Absolute Maximum Ratings” may cause permanent
damage to the device. Exposure to absolute maximum rated conditions for extended periods may affect device
reliability.
2. The device is not intended to be operated outside of the Operating Ratings.
3. Electrical Characteristics provided are associated with the stated Test Conditions.
4. Typical values are presented in order to communicate how the device is expected to perform, but not necessarily
to highlight any specific performance limits within which the device is guaranteed to function.
Copyright ? 2006 IXYS CORPORATION All rights reserved
4
相关PDF资料
IXDI404SIA IC MOSFET DRVR DUAL 4A 8-SOIC
IXDI409SIA IC MOSFET DVR 9A INV 8-SOIC
IXDI604SI IC GATE DVR 4A INV 8-SOIC
IXDI609YI IC GATE DVR 9A DUAL HS TO263-5
IXDN402SIA IC MOSFET DRVR DUAL 2A 8-SOIC
IXDN414YI IC DRIVER MOSF/IGBT 14A 5-TO-263
IXDN509D1T/R IC GATE DRIVER SGL 9A 6-DFN
IXDN514SIAT/R IC GATE DRIVER SGL 14A 8-SOIC
相关代理商/技术参数
IXDF402PI 功能描述:功率驱动器IC 2 Amps 40V 3 Rds RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube
IXDF402SI 功能描述:功率驱动器IC 40V 2A RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube
IXDF402SI-16 制造商:IXYS 制造商全称:IXYS Corporation 功能描述:2 Ampere Dual Low-Side Ultrafast MOSFET Drivers
IXDF402SIA 功能描述:功率驱动器IC 2 Amps 40V 3 Rds RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube
IXDF402SIA-16 制造商:IXYS 制造商全称:IXYS Corporation 功能描述:2 Ampere Dual Low-Side Ultrafast MOSFET Drivers
IXDF404 制造商:IXYS 制造商全称:IXYS Corporation 功能描述:4 Ampere Dual Low-Side Ultrafast MOSFET Drivers
IXDF404PI 功能描述:功率驱动器IC 40V 4A RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube
IXDF404SI 功能描述:功率驱动器IC 40V 4A RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube